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CONCENTRATION-DEPENDENCE OF OPTICAL-EMISSION FROM SULFUR-DOPED CRYSTALLINE SILICON

被引：27
作者：
BROWN, TG
BRADFIELD, PL
HALL, DG
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 20期
关键词：
D O I：
10.1063/1.98562
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：1585 / 1587
页数：3
相关论文
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[2]   OPTICAL-EMISSION AT 1.32-MU-M FROM SULFUR-DOPED CRYSTALLINE SILICON [J].
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[3]   OBSERVATION OF ELECTROLUMINESCENCE FROM EXCITONS BOUND TO ISOELECTRONIC IMPURITIES IN CRYSTALLINE SILICON [J].
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[6]  
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[7]   OPTICAL-PROPERTIES OF COPPER IN SILICON - EXCITONS BOUND TO ISOELECTRONIC COPPER PAIRS [J].
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