共 8 条
- [1] BOUND EXCITON RECOMBINATION IN BERYLLIUM-DOPED SILICON [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (10): : L255 - L261
- [5] ISOELECTRONIC BOUND EXCITONS IN IN-DOPED AND TL-DOPED SI - A NOVEL SEMICONDUCTOR DEFECT [J]. PHYSICAL REVIEW B, 1984, 29 (10): : 5727 - 5738
- [7] OPTICAL-PROPERTIES OF COPPER IN SILICON - EXCITONS BOUND TO ISOELECTRONIC COPPER PAIRS [J]. PHYSICAL REVIEW B, 1982, 25 (12): : 7688 - 7699
- [8] LOCALIZED EXCITON BOUND TO AN ISOELECTRONIC TRAP IN SILICON [J]. PHYSICAL REVIEW B, 1980, 21 (06): : 2401 - 2414