OBSERVATION OF LONG LIFETIME LINES IN PHOTO-LUMINESCENCE FROM SI-IN

被引：61

作者：

MITCHARD, GS

LYON, SA

ELLIOTT, KR

MCGILL, TC

机构：

[1] California Institute of Technology Pasadena

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 29卷 / 05期

关键词：

D O I：

10.1016/0038-1098(79)91209-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report the first observation of lines with lifetimes of about 200 μs in silicon samples doped with indium. These long lifetimes are comparable to the radiative lifetime for the indium bound exciton and suggest that these lines are due to isoelectronic centers in silicon. © 1979.

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页码：425 / 429

页数：5

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