HIGH-RESOLUTION INVESTIGATION OF RECOMBINATION RADIATION FROM SI CONTAINING ACCEPTORS B, AL, GA, IN AND TL

被引：69

作者：

VOUK, MA ^{[1
]}

LIGHTOWLERS, EC ^{[1
]}

机构：

[1] UNIV LONDON,KINGS COLL,WHEATSTONE PHYS LAB,LONDON WC2R 2LS,ENGLAND

来源：

JOURNAL OF LUMINESCENCE | 1977年 / 15卷 / 04期

关键词：

D O I：

10.1016/0022-2313(77)90036-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：357 / 384

页数：28

共 65 条

[1]

Alkeev N. V., 1976, Soviet Physics - Solid State, V17, P535

[2] CORE EFFECTS ON BOUND-EXCITON-NEUTRAL-IMPURITY COMPLEXES WITH PARTICULAR REFERENCE TO TRANSITION-METAL IMPURITIES [J].

ALLEN, JW ;

DEAN, PJ ;

WHITE, AM .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1976, 9 (05) :L113-L116

[3] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[4]

ASHKINADZE BM, 1970, SOV PHYS JETP-USSR, V31, P271

[5] ELECTRON-HOLE LIQUID IN HEAVILY DOPED N-TYPE GE AND SI [J].

BERGERSEN, B ;

JENA, P ;

BERLINSKY, AJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (09) :1377-1386

[6] PHOTOIONIZATION CROSS-SECTION FOR MANGANESE ACCEPTORS IN GALLIUM-ARSENIDE [J].

BROWN, WJ ;

WOODBURY, DA ;

BLAKEMORE, JS .

PHYSICAL REVIEW B, 1973, 8 (12) :5664-5670

[7]

BUCK TM, 1970, SILICON DEVICE PROCE, P419

[8]

COLLET J, 1975, SOLID STATE COMMUN, V16, P775, DOI 10.1016/0038-1098(75)90073-3

[9] ABSORPTION DUE TO BOUND EXCITONS IN SILICON [J].

DEAN, PJ ;

FLOOD, WF ;

KAMINSKY, G .

PHYSICAL REVIEW, 1967, 163 (03) :721-&

[10] OPTICAL PROPERTIES OF EXCITONS BOUND TO NEUTRAL ACCEPTORS IN GAP [J].

DEAN, PJ ;

FAULKNER, RA ;

KIMURA, S ;

ILEGEMS, M .

PHYSICAL REVIEW B, 1971, 4 (06) :1926-&

← 1 2 3 4 5 6 7 →