HIGH-RESOLUTION INVESTIGATION OF RECOMBINATION RADIATION FROM SI CONTAINING ACCEPTORS B, AL, GA, IN AND TL

被引：69

作者：

VOUK, MA ^{[1
]}

LIGHTOWLERS, EC ^{[1
]}

机构：

[1] UNIV LONDON,KINGS COLL,WHEATSTONE PHYS LAB,LONDON WC2R 2LS,ENGLAND

来源：

JOURNAL OF LUMINESCENCE | 1977年 / 15卷 / 04期

关键词：

D O I：

10.1016/0022-2313(77)90036-9

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：357 / 384

页数：28

共 65 条

[41]

POKROVSKY YE, 1964, P 7 INT C PHYS SEM P, P129

[42] PHOTOLUMINESCENT DETECTION OF IMPURITY BAND IN SI(P) [J].

ROSTWOROWSKI, JA ;

THEWALT, MLW ;

PARSONS, RR .

SOLID STATE COMMUNICATIONS, 1976, 18 (01) :93-95

[43] LINEAR AND QUADRATIC ZEEMAN EFFECT OF EXCITONS BOUND TO NEUTRAL ACCEPTORS IN GASB [J].

RUHLE, W ;

BIMBERG, D .

PHYSICAL REVIEW B, 1975, 12 (06) :2382-2390

[44] BOUND MULTIPLE-EXCITON COMPLEXES IN SILICON AT HIGH DOPING LEVELS [J].

SAUER, R .

SOLID STATE COMMUNICATIONS, 1974, 14 (06) :481-483

[45] MAGNETIC-FIELD AND STRESS-INDUCED SPLITTING OF NOVEL SHARP EMISSION-LINE SERIES IN SILICON ASSOCIATED WITH P, LI, OR B - NO BOUND MULTIPLE-EXCITON COMPLEXES [J].

SAUER, R ;

WEBER, J .

PHYSICAL REVIEW LETTERS, 1976, 36 (01) :48-51

[46] EVIDENCE FOR BOUND MULTIPLE-EXCITON COMPLEXES IN SILICON [J].

SAUER, R .

PHYSICAL REVIEW LETTERS, 1973, 31 (06) :376-379

[47]

SAUER R, 1974, 12TH P INT C PHYS SE, P42

[48] PIEZOSPECTROSCOPIC AND MAGNETO-OPTICAL STUDY OF SN-ACCEPTOR IN GAAS [J].

SCHAIRER, W ;

BIMBERG, D ;

KOTTLER, W ;

CHO, K ;

SCHMIDT, M .

PHYSICAL REVIEW B, 1976, 13 (08) :3452-3467

[49] IMPACT IONIZATION OF DONORS IN SEMICONDUCTORS AS A TOOL FOR PHOTOLUMINESCENCE INVESTIGATIONS [J].

SCHAIRER, W ;

STATH, N .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :447-&

[50]

SCHAIRER W, 1970, PHYS REV B, V10, P2501

← 1 2 3 4 5 6 7 →