AUGER LIFETIMES FOR EXCITONS BOUND TO NEUTRAL DONORS AND ACCEPTORS IN SI

[1] AGGARWAL RL, 1965, PHYS REV, V140, P1246

[2] EXCITATION SPECTRA OF LITHIUM DONORS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1965, 138 (3A): : A882 - &

[3] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J]. PHYSICAL REVIEW, 1966, 142 (02): : 530 - &

[4] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[5] ABSORPTION DUE TO BOUND EXCITONS IN SILICON [J]. PHYSICAL REVIEW, 1967, 163 (03): : 721 - &

[6] OPTICAL PROPERTIES OF EXCITONS BOUND TO NEUTRAL ACCEPTORS IN GAP [J]. PHYSICAL REVIEW B, 1971, 4 (06): : 1926 - &

[7] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1967, 161 (03): : 711 - &

[8] DEXTER DL, 1958, SOLID STATE PHYS, V6, P361

[9] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[10] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1960, 4 (07) : 361 - 363

[1] AGGARWAL RL, 1965, PHYS REV, V140, P1246

[2] EXCITATION SPECTRA OF LITHIUM DONORS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1965, 138 (3A): : A882 - &

[3] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD [J]. PHYSICAL REVIEW, 1966, 142 (02): : 530 - &

[4] BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J]. PHYSICAL REVIEW, 1966, 141 (02): : 789 - +

[5] ABSORPTION DUE TO BOUND EXCITONS IN SILICON [J]. PHYSICAL REVIEW, 1967, 163 (03): : 721 - &

[6] OPTICAL PROPERTIES OF EXCITONS BOUND TO NEUTRAL ACCEPTORS IN GAP [J]. PHYSICAL REVIEW B, 1971, 4 (06): : 1926 - &

[7] NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J]. PHYSICAL REVIEW, 1967, 161 (03): : 711 - &

[8] DEXTER DL, 1958, SOLID STATE PHYS, V6, P361

[9] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[10] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J]. PHYSICAL REVIEW LETTERS, 1960, 4 (07) : 361 - 363