LUMINESCENCE DUE TO ISOELECTRONIC SUBSTITUTION OF BISMUTH FOR PHOSPHORUS IN GALLIUM PHOSPHIDE - (CRYSTAL GROWTH - DOPING - DIFFUSION - PHOTOLUMINESCENCE - ELECTROLUMINESCENCE - TEMPERATURE DEPENDENCE - E)

被引：105

作者：

TRUMBORE, FA

GERSHENZON, M

THOMAS, DG

机构：

来源：

关键词：

D O I：

10.1063/1.1754592

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4 / +

页数：1

共 5 条

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ATEN, AC
HAANSTRA, JH
[J]. PHYSICS LETTERS, 1964, 11 (02): : 97 - 98
[2] ATEN AC, 1965, PHILIPS RES REP, V20, P295
[3] GERSHENZON M, IN PRESS
[4] PAIR SPECTRA + EDGE EMISSION IN GALLIUM PHOSPHIDE
THOMAS, DG
GERSHENZON, M
TRUMBORE, FA
[J]. PHYSICAL REVIEW, 1964, 133 (1A): : A269 - A279
[5] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE
THOMAS, DG
HOPFIELD, JJ
FROSCH, CJ
[J]. PHYSICAL REVIEW LETTERS, 1965, 15 (22) : 857 - &