ISOELECTRONIC BOUND EXCITONS IN IN-DOPED AND TL-DOPED SI - A NOVEL SEMICONDUCTOR DEFECT

被引：31

作者：

WATKINS, SP

THEWALT, MLW

STEINER, T

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.29.5727

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5727 / 5738

页数：12

共 28 条

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