EVIDENCE FOR THE EXISTENCE OF A COMPLEX ISOELECTRONIC CENTER IN SI-IN

被引:18
作者
BROWN, DH
SMITH, SR
机构
关键词
D O I
10.1016/0022-2313(80)90025-3
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
引用
收藏
页码:329 / 336
页数:8
相关论文
共 13 条
[1]  
Baldereschi A., 1973, Journal of Luminescence, V7, P79, DOI 10.1016/0022-2313(73)90060-4
[2]   NEW RADIATIVE RECOMBINATION PROCESSES INVOLVING NEUTRAL DONORS AND ACCEPTORS IN SILICON AND GERMANIUM [J].
DEAN, PJ ;
HAYNES, JR ;
FLOOD, WF .
PHYSICAL REVIEW, 1967, 161 (03) :711-&
[3]   EVIDENCE FOR AN EXCITED-LEVEL OF THE NEUTRAL INDIUM ACCEPTOR IN SILICON [J].
ELLIOTT, KR ;
LYON, SA ;
SMITH, DL ;
MCGILL, TC .
PHYSICS LETTERS A, 1979, 70 (01) :52-54
[4]   EDGE LUMINESCENCE SPECTRA OF ACCEPTORS IN SI - IMPLICATIONS FOR MULTIEXCITON COMPLEXES [J].
LYON, SA ;
SMITH, DL ;
MCGILL, TC .
PHYSICAL REVIEW B, 1978, 17 (06) :2620-2624
[5]  
LYON SA, 1978, JUN IRIS M
[6]   OBSERVATION OF LONG LIFETIME LINES IN PHOTO-LUMINESCENCE FROM SI-IN [J].
MITCHARD, GS ;
LYON, SA ;
ELLIOTT, KR ;
MCGILL, TC .
SOLID STATE COMMUNICATIONS, 1979, 29 (05) :425-429
[7]   UNIDENTIFIED ACCEPTORS IN SILICON AND GERMANIUM [J].
OHMER, MC ;
LANG, JE .
APPLIED PHYSICS LETTERS, 1979, 34 (11) :750-752
[8]   INDIUM BOUND EXCITON LUMINESCENCE IN SILICON [J].
SAUER, R ;
SCHMID, W ;
WEBER, J .
SOLID STATE COMMUNICATIONS, 1978, 27 (07) :705-708
[9]   EFFECT OF ELECTRON-IRRADIATION ON THE IN-X ACCEPTOR IN IN-DOPED SILICON [J].
SWAMINATHAN, V ;
LANG, JE ;
HEMENGER, PM ;
SMITH, SR .
APPLIED PHYSICS LETTERS, 1979, 35 (02) :184-187
[10]   HIGH-RESOLUTION INVESTIGATION OF RECOMBINATION RADIATION FROM SI CONTAINING ACCEPTORS B, AL, GA, IN AND TL [J].
VOUK, MA ;
LIGHTOWLERS, EC .
JOURNAL OF LUMINESCENCE, 1977, 15 (04) :357-384