UNIDENTIFIED ACCEPTORS IN SILICON AND GERMANIUM

被引:15
作者
OHMER, MC
LANG, JE
机构
[1] Air Force Materials Laboratory, AFML/LPO, Air Force Wright Aeronautical Laboratories, Wright-Patterson Air Force Base
关键词
D O I
10.1063/1.90660
中图分类号
O59 [应用物理学];
学科分类号
摘要
An empirical rule for calculating the ionization energy and the infrared absorption spectra of five unidentified acceptor levels in silicon and germanium is presented. The success of this rule may imply that these levels result from interactions between unlike substitutional group-III impurities.
引用
收藏
页码:750 / 752
页数:3
相关论文
共 14 条
[1]   SPECTROSCOPIC EVIDENCE FOR INTERACTION BETWEEN SHALLOW HYDROGENIC DONORS IN GAAS, INP AND CDTE [J].
BAJAJ, KK ;
BIRCH, JR ;
EAVES, L ;
HOULT, RA ;
KIRKMAN, RF ;
SIMMONDS, PE ;
STRADLING, RA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (04) :530-540
[2]   NATURE OF THE 0.111-EV ACCEPTOR LEVEL IN INDIUM-DOPED SILICON [J].
BARON, R ;
BAUKUS, JP ;
ALLEN, SD ;
MCGILL, TC ;
YOUNG, MH ;
KIMURA, H ;
WINSTON, HV ;
MARSH, OJ .
APPLIED PHYSICS LETTERS, 1979, 34 (04) :257-259
[3]   NEW ACCEPTOR LEVEL IN INDIUM-DOPED SILICON [J].
BARON, R ;
YOUNG, MH ;
NEELAND, JK ;
MARSH, OJ .
APPLIED PHYSICS LETTERS, 1977, 30 (11) :594-596
[4]  
CROSSMAN LD, 1977, 3RD P INT S SIL MAT, P18
[5]   CHEMICAL IMPURITIES AND LATTICE-DEFECTS IN HIGH-PURITY GERMANIUM [J].
HALL, RN .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1974, NS21 (01) :260-272
[6]   HIGH-RESOLUTION FOURIER-TRANSFORM SPECTROSCOPY OF SHALLOW ACCEPTORS IN ULTRA-PURE GERMANIUM [J].
HALLER, EE ;
HANSEN, WL .
SOLID STATE COMMUNICATIONS, 1974, 15 (04) :687-692
[7]  
HROWTOWSKI HJ, 1958, J PHYS CHEM SOLIDS, V4, P148
[8]   EXCITATION SPECTRA OF GROUP 3 IMPURITIES IN GERMANIUM [J].
JONES, RL ;
FISHER, P .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (07) :1125-&
[9]   EFFECT OF IMPURITY INTERACTION UPON IONIZATION ENERGY OF DONOR ELECTRONS IN GERMANIUM [J].
NAGASAKA, K ;
NARITA, S .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1973, 35 (03) :797-805
[10]   SPECTROSCOPIC INVESTIGATION OF GROUP-3 ACCEPTOR STATES IN SILICON [J].
ONTON, A ;
FISHER, P ;
RAMDAS, AK .
PHYSICAL REVIEW, 1967, 163 (03) :686-&