EFFECT OF ELECTRON-IRRADIATION ON THE IN-X ACCEPTOR IN IN-DOPED SILICON

被引：8

作者：

SWAMINATHAN, V ^{[1
]}

LANG, JE ^{[1
]}

HEMENGER, PM ^{[1
]}

SMITH, SR ^{[1
]}

机构：

[1] UNIV DAYTON,DAYTON,OH 45409

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 02期

关键词：

D O I：

10.1063/1.91030

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the results of low-temperature Hall measurements on 1-MeV-electron-irradiated In-doped Si. It is observed that the concentrations of the acceptor In-X, Nx, and the compensating donor ND increase immediately after irradiation with fluences ranging from 2×1015 to 1016 e/cm2. It is suggested that ND increases after irradiation due to the creation of divacancies, interstitial indium, and interstitial indium-substitutional indium pairs, where the interstitial indium atoms occupy the tetrahedral site. To explain the increase in Nx we propose three possible models for In-X in terms of indium-vacancy pairs, indium interstitials in the split configuration, or indium interstitials in the bond-centered configuration.

引用

页码：184 / 187

页数：4

共 23 条

[1] EFFECTIVE MASS AND INTRINSIC CONCENTRATION IN SILICON [J].