EVIDENCE FOR AN EXCITED-LEVEL OF THE NEUTRAL INDIUM ACCEPTOR IN SILICON

被引：11

作者：

ELLIOTT, KR

LYON, SA

SMITH, DL

MCGILL, TC

机构：

[1] California Institute of Technology, Pasadena

来源：

PHYSICS LETTERS A | 1979年 / 70卷 / 01期

关键词：

D O I：

10.1016/0375-9601(79)90325-6

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

On the basis of the dependence of the photoluminescence on pump power, indium concentration and temperature we have determined that an excited level of the neutral indium acceptor exists 4.1 ± 0.1 meV above the ground state. © 1979.

引用

页码：52 / 54

页数：3

共 6 条

[1] CAPTURE CROSS-SECTION OF EXCITONS ON NEUTRAL INDIUM IMPURITIES IN SILICON
ELLIOTT, KR
SMITH, DL
MCGILL, TC
[J]. SOLID STATE COMMUNICATIONS, 1977, 24 (07) : 461 - 463
[2] PARAMAGNETIC RESONANCE ABSORPTION FROM ACCEPTORS IN SILICON
FEHER, G
HENSEL, JC
GERE, EA
[J]. PHYSICAL REVIEW LETTERS, 1960, 5 (07) : 309 - 311
[3] EDGE LUMINESCENCE SPECTRA OF ACCEPTORS IN SI - IMPLICATIONS FOR MULTIEXCITON COMPLEXES
LYON, SA
SMITH, DL
MCGILL, TC
[J]. PHYSICAL REVIEW B, 1978, 17 (06): : 2620 - 2624
[4] VIBRONIC COUPLING IN SEMICONDUCTORS - DYNAMIC JAHN-TELLER EFFECT
MORGAN, TN
[J]. PHYSICAL REVIEW LETTERS, 1970, 24 (16) : 887 - &
[5] ULTRASONIC-ATTENUATION DUE TO NEUTRAL ACCEPTOR INDIUM IN SILICON
SCHAD, H
LASSMANN, K
[J]. PHYSICS LETTERS A, 1976, 56 (05) : 409 - 410
[6] HIGH-RESOLUTION INVESTIGATION OF RECOMBINATION RADIATION FROM SI CONTAINING ACCEPTORS B, AL, GA, IN AND TL
VOUK, MA
LIGHTOWLERS, EC
[J]. JOURNAL OF LUMINESCENCE, 1977, 15 (04) : 357 - 384

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