ULTRASONIC-ATTENUATION DUE TO NEUTRAL ACCEPTOR INDIUM IN SILICON

被引：18

作者：

SCHAD, H ^{[1
]}

LASSMANN, K ^{[1
]}

机构：

[1] UNIV STUTTGART,INST PHYS,STUTTGART,FED REP GER

来源：

PHYSICS LETTERS A | 1976年 / 56卷 / 05期

关键词：

D O I：

10.1016/0375-9601(76)90391-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

收藏

页码：409 / 410

页数：2

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[1] COMBARIEU AD, 2ND P INT C PHON SCA
[2] EVIDENCE FOR 870-GHZ PHONON EMISSION FROM SUPERCONDUCTING AL TUNNEL-DIODES THROUGH RESONANT SCATTERING BY OXYGEN IN SILICON
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[J]. PHYSICAL REVIEW LETTERS, 1973, 31 (04) : 215 - 216
[3] ABSORPTION OF OXYGEN IN SILICON IN FAR INFRARED
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BOSOMWORTH, DR
[J]. PHYSICAL REVIEW LETTERS, 1969, 23 (15) : 851 - +
[4] ANOMALOUS ULTRASONIC ATTENUATION IN VITREOUS SILICA AT LOW-TEMPERATURES
HUNKLINGER, S
ARNOLD, W
STEIN, S
[J]. PHYSICS LETTERS A, 1973, A 45 (04) : 311 - 312
[5] FREQUENCY-DEPENDENCE OF ACOUSTIC ABSORPTION BY ACCEPTOR HOLES IN SI
ISHIGURO, T
TOKUMOTO, H
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1974, 37 (06) : 1716 - 1716
[6] LASSMANN K, TO BE PUBLISHED
[7] ORTLIEB E, 2ND P INT C PHON SCA