FREQUENCY-DEPENDENCE OF ACOUSTIC ABSORPTION BY ACCEPTOR HOLES IN SI

被引：4

作者：

ISHIGURO, T ^{[1
]}

TOKUMOTO, H ^{[1
]}

机构：

[1] ELECTROTECH LAB,TANASHI 188,TOKYO,JAPAN

来源：

关键词：

D O I：

10.1143/JPSJ.37.1716

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1716 / 1716

页数：1

相关论文

共 4 条

[1] INTERACTION OF ACOUSTIC-WAVES WITH ACCEPTOR HOLES IN SILICON - INFLUENCE OF INTERNAL STRESS
ISHIGURO, T
[J]. PHYSICAL REVIEW B, 1973, 8 (02): : 629 - 640
[2] MASON WP, 1964, PHYS REV, V134, P1386
[3] ULTRASONIC ATTENUATION BY ACCEPTOR HOLES IN SI
SUZUKI, K
MIKOSHIBA, N
[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (02) : 94 - +
[4] LOW-TEMPERATURE THERMAL CONDUCTIVITY OF P-TYPE GE AND SI
SUZUKI, K
MIKOSHIBA, N
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (08): : 2550 - +