LOW-TEMPERATURE THERMAL CONDUCTIVITY OF P-TYPE GE AND SI

[1] MODEL FOR LATTICE THERMAL CONDUCTIVITY AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1959, 113 (04): : 1046 - 1051

[2] Carruthers J. A., 1962, CRYOGENICS, V2, P160, DOI [10.1016/0011-2275(62)90035-8, DOI 10.1016/0011-2275(62)90035-8]

[3] THE THERMAL CONDUCTIVITY OF GERMANIUM AND SILICON BETWEEN 2-DEGREES-K AND 300-DEGREES-K [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 238 (1215): : 502 - 514

[4] GOFF JF, 1965, PHYS REV, V140, P2151

[5] THERMAL CONDUCTIVITY OF SOLIDS IV - RESONANCE FLUORESCENCE SCATTERING OF PHONONS BY DONOR ELECTRONS IN GERMANIUM [J]. PHYSICAL REVIEW, 1963, 131 (05): : 1976 - &

[6] LARGE-STRAIN DEPENDENCE OF ACCEPTOR BINDING ENERGY IN GERMANIUM [J]. PHYSICAL REVIEW, 1962, 128 (01): : 68 - &

[7] THEORY OF CYCLOTRON RESONANCE IN STRAINED SILICON CRYSTALS [J]. PHYSICAL REVIEW, 1963, 129 (03): : 1029 - &

[8] QUANTUM EFFECTS IN CYCLOTRON RESONANCE OF HOLES IN UNIAXIALLY STRESSED GERMANIUM [J]. SOLID STATE COMMUNICATIONS, 1966, 4 (05) : 231 - &

[9] CYCLOTRON RESONANCE EXPERIMENTS IN UNIAXIALLY STRESSED SILICON - VALENCE BAND INVERSE MASS PARAMETERS AND DEFORMATION POTENTIALS [J]. PHYSICAL REVIEW, 1963, 129 (03): : 1041 - &

[10] HOLLAND MG, 1962, 1962 P INT C PHYS SE, P474

[1] MODEL FOR LATTICE THERMAL CONDUCTIVITY AT LOW TEMPERATURES [J]. PHYSICAL REVIEW, 1959, 113 (04): : 1046 - 1051

[2] Carruthers J. A., 1962, CRYOGENICS, V2, P160, DOI [10.1016/0011-2275(62)90035-8, DOI 10.1016/0011-2275(62)90035-8]

[3] THE THERMAL CONDUCTIVITY OF GERMANIUM AND SILICON BETWEEN 2-DEGREES-K AND 300-DEGREES-K [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1957, 238 (1215): : 502 - 514

[4] GOFF JF, 1965, PHYS REV, V140, P2151

[5] THERMAL CONDUCTIVITY OF SOLIDS IV - RESONANCE FLUORESCENCE SCATTERING OF PHONONS BY DONOR ELECTRONS IN GERMANIUM [J]. PHYSICAL REVIEW, 1963, 131 (05): : 1976 - &

[6] LARGE-STRAIN DEPENDENCE OF ACCEPTOR BINDING ENERGY IN GERMANIUM [J]. PHYSICAL REVIEW, 1962, 128 (01): : 68 - &

[7] THEORY OF CYCLOTRON RESONANCE IN STRAINED SILICON CRYSTALS [J]. PHYSICAL REVIEW, 1963, 129 (03): : 1029 - &

[8] QUANTUM EFFECTS IN CYCLOTRON RESONANCE OF HOLES IN UNIAXIALLY STRESSED GERMANIUM [J]. SOLID STATE COMMUNICATIONS, 1966, 4 (05) : 231 - &

[9] CYCLOTRON RESONANCE EXPERIMENTS IN UNIAXIALLY STRESSED SILICON - VALENCE BAND INVERSE MASS PARAMETERS AND DEFORMATION POTENTIALS [J]. PHYSICAL REVIEW, 1963, 129 (03): : 1041 - &

[10] HOLLAND MG, 1962, 1962 P INT C PHYS SE, P474