INTERACTION OF ACOUSTIC-WAVES WITH ACCEPTOR HOLES IN SILICON - INFLUENCE OF INTERNAL STRESS

被引：20

作者：

ISHIGURO, T ^{[1
]}

机构：

[1] ELECTROTECH LAB,TANASHI 188,TOKYO,JAPAN

来源：

PHYSICAL REVIEW B | 1973年 / 8卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.8.629

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：629 / 640

页数：12

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