ABSORPTION OF OXYGEN IN SILICON IN FAR INFRARED

被引：14

作者：

HAYES, W

BOSOMWORTH, DR

机构：

[1] RCA Laboratories, Princeton

来源：

PHYSICAL REVIEW LETTERS | 1969年 / 23卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.23.851

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An absorption line of oxygen in silicon has been observed at 29.3 cm-1 at 1.8°K. Assignment to oxygen has been confirmed by observation of the oxygen isotope effect. Effects of uniaxial stress on the line have been measured. Additional lines observed at 37.7, 43.5, and 48.9 cm-1 when the crystals are heated to 35°K are assigned to a bending vibrational mode of Si2O. © 1969 The American Physical Society.

引用

页码：851 / +

页数：1

共 10 条

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