BOUND EXCITON RECOMBINATION AT MN-ZN PAIR CENTERS IN SILICON

被引：9

作者：

HENRY, MO ^{[1
]}

MCGUIGAN, KG ^{[1
]}

BARKLIE, RC ^{[1
]}

机构：

[1] UNIV DUBLIN TRINITY COLL,DEPT PURE & APPL PHYS,DUBLIN 2,IRELAND

来源：

关键词：

D O I：

10.1016/0038-1098(87)90514-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：31 / 33

页数：3

共 11 条

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[4] Dean P. J., 1979, Excitons, P55, DOI 10.1007/978-3-642-81368-9_3
[5] LUDWIG GW, 1962, SOLID STATE PHYS, V13, P223
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[7] Monemar B., 1986, Materials Science Forum, V10-12, P97, DOI 10.4028/www.scientific.net/MSF.10-12.97
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[9] TRANSITION-METALS IN SILICON
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[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 30 (01): : 1 - 22
[10] OPTICAL-PROPERTIES OF COPPER IN SILICON - EXCITONS BOUND TO ISOELECTRONIC COPPER PAIRS
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