FAR-INFRARED ABSORPTION-SPECTRUM OF BE-RELATED BOUND EXCITONS IN SILICON

被引：29

作者：

LABRIE, D ^{[1
]}

TIMUSK, T ^{[1
]}

THEWALT, MLW ^{[1
]}

机构：

[1] SIMON FRASER UNIV,DEPT PHYS,BURNABY V5A 1S6,BC,CANADA

来源：

关键词：

D O I：

10.1103/PhysRevLett.52.81

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：81 / 84

页数：4

共 14 条

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