CENTRAL CELL EFFECTS ON ACCEPTOR SPECTRA IN SI AND GE

被引：79

作者：

LIPARI, NO

BALDERESCHI, A

THEWALT, MLW

机构：

来源：

SOLID STATE COMMUNICATIONS | 1980年 / 33卷 / 03期

关键词：

D O I：

10.1016/0038-1098(80)91152-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：277 / 279

页数：3

共 14 条

[1]

BALDERESCHI A, 1976, 13TH P INT C PHYS SE, P595

[2] THEORY OF BINDING-ENERGIES OF ACCEPTORS IN SEMICONDUCTORS [J].

BERNHOLC, J ;

PANTELIDES, ST .

PHYSICAL REVIEW B, 1977, 15 (10) :4935-4947

[3] RESONANT INTERACTION OF ACCEPTOR STATES WITH OPTICAL PHONONS IN SILICON [J].

CHANDRASEKHAR, HR ;

RAMDAS, AK ;

RODRIGUEZ, S .

PHYSICAL REVIEW B, 1976, 14 (06) :2417-2421

[4]

GERSHENZON EM, 1977, SOV PHYS JETP, V45, P769

[5] HIGH-RESOLUTION FOURIER-TRANSFORM SPECTROSCOPY OF SHALLOW ACCEPTORS IN ULTRA-PURE GERMANIUM [J].

HALLER, EE ;

HANSEN, WL .

SOLID STATE COMMUNICATIONS, 1974, 15 (04) :687-692

[6] EXCITATION SPECTRA OF GROUP 3 IMPURITIES IN GERMANIUM [J].

JONES, RL ;

FISHER, P .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (07) :1125-&

[7]

KAGANE ML, 1978, SOV PHYS SEMICOND+, V12, P109

[8] INTERPRETATION OF ACCEPTOR SPECTRA IN SEMICONDUCTORS [J].

LIPARI, NO ;

BALDERESCHI, A .

SOLID STATE COMMUNICATIONS, 1978, 25 (09) :665-668

[9] SPECTROSCOPIC INVESTIGATION OF GROUP-3 ACCEPTOR STATES IN SILICON [J].

ONTON, A ;

FISHER, P ;

RAMDAS, AK .

PHYSICAL REVIEW, 1967, 163 (03) :686-&

[10] INFRARED EXCITATION SPECTRUM OF THALLIUM-DOPED SILICON [J].

SCOTT, W ;

SCHMIT, JL .

APPLIED PHYSICS LETTERS, 1978, 33 (04) :294-295

← 1 2 →