EXCITED-STATES OF EXCITONS BOUND TO NITROGEN PAIRS IN GAP

被引：126

作者：

COHEN, E ^{[1
]}

STURGE, MD ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1977年 / 15卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.15.1039

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1039 / 1051

页数：13

共 49 条

[1] ISOELECTRONIC IMPURITIES IN SEMICONDUCTORS - SURVEY OF BINDING MECHANISMS
ALLEN, JW
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (14): : 1936 - &
[2] ENERGY LEVELS OF NITROGEN-NITROGEN PAIRS IN GALLIUM PHOSPHIDE
ALLEN, JW
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1968, 1 (04): : 1136 - &
[3] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS
ASHEN, DJ
DEAN, PJ
HURLE, DTJ
MULLIN, JB
WHITE, AM
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) : 1041 - 1053
[4] PHONON-ASSISTED TRANSITIONS IN GALLIUM-PHOSPHIDE MODULATION SPECTRA
AUVERGNE, D
MERLE, P
MATHIEU, H
[J]. PHYSICAL REVIEW B, 1975, 12 (04): : 1371 - 1376
[5] CUBIC CONTRIBUTIONS TO SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES
BALDERES.A
LIPARI, NO
[J]. PHYSICAL REVIEW B, 1974, 9 (04): : 1525 - 1539
[6] Baldereschi A., 1973, Journal of Luminescence, V7, P79, DOI 10.1016/0022-2313(73)90060-4
[7] SPHERICAL MODEL OF SHALLOW ACCEPTOR STATES IN SEMICONDUCTORS
BALDERESCHI, A
LIPARI, NO
[J]. PHYSICAL REVIEW B, 1973, 8 (06) : 2697 - 2709
[8] BALDERESCHI A, 1974, 12TH P INT C PHYS SE, P345
[9] LIGHT-EMITTING DIODES
BERGH, AA
DEAN, PJ
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (02): : 156 - +
[10] BIMBERG D, UNPUBLISHED