Local microstructures of Si in GaN studied by x-ray absorption spectroscopy

被引：8

作者：

Lu, ZH ^{[1
]}

Tyliszczak, T

Broderson, P

Hitchcock, AP

Webb, JB

Tang, H

Bardwell, J

机构：

[1] Univ Toronto, Dept Met & Mat Sci, Toronto, ON M5S 3E4, Canada

[2] McMaster Univ, Inst Mat Res, Hamilton, ON L8S 4M1, Canada

[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 04期

关键词：

D O I：

10.1063/1.124439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si K-edge x-ray absorption spectroscopy (XAFS) has been used to study the local structure of Si dopant in GaN crystalline material. Doping concentrations N-Si from 8.0x10(16) to 4.4x10(19) cm(-3) were investigated. It is observed that the near-edge spectra vary significantly as a function of N-Si. At low concentrations the Si K-edge spectra exhibit features similar to that obtained from N K-edge measurement, while at high concentrations the near-edge spectra shape is similar to that recorded from Si3N4. We interpret the results as an indication that Si is not randomly distributed. The changes of the near-edge spectra as a function of doping level is explained as due to changes in the magnitude of Si local lattice contraction caused by the formation of various types of Si clusters. The interpretation is further supported by extended XAFS spectra analysis. A Si-induced strain-field near the surface is proposed as the main force for the cluster formation during epitaxial growth. (C) 1999 American Institute of Physics. [S0003-6951(99)01127-4].

引用

页码：534 / 536

页数：3

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