LATTICE COMPRESSION FROM CONDUCTION ELECTRONS IN HEAVILY DOPED SI-AS

被引：110

作者：

CARGILL, GS ^{[1
]}

ANGILELLO, J ^{[1
]}

KAVANAGH, KL ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI ENGN,CAMBRIDGE,MA 02139

来源：

PHYSICAL REVIEW LETTERS | 1988年 / 61卷 / 15期

关键词：

D O I：

10.1103/PhysRevLett.61.1748

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1748 / 1751

页数：4

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