Complex plane analysis of pn junction forward-voltage impedance

被引：11

作者：

Bisquert, J

GarciaBelmonte, G

机构：

[1] Dept. de Ciencies Experimentals, Universitat Jaume I

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 10期

关键词：

spectroscopy; pn junctions;

D O I：

10.1049/el:19970565

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The impedance response of pn junctions with applied direct voltage was studied, emphasising the model functions that account for the diffusion of minority carriers in an equivalent circuit model.

引用

页码：900 / 901

页数：2

共 7 条

[1] BOUKAMP BA, EQUIVCRT SOFTWARE
[2] Use of Kramers-Kronig transforms for the treatment of admittance spectroscopy data of p-n junctions containing traps
Leon, C
Martin, JM
Santamaria, J
Skarp, J
GonzalezDiaz, G
SanchezQuesada, F
[J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) : 7830 - 7836
[3] ADMITTANCE SPECTROSCOPY OF IMPURITY LEVELS IN SCHOTTKY BARRIERS
LOSEE, DL
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) : 2204 - 2214
[4] Macdonald J. R., 1987, IMPEDANCE SPECTROSCO
[5] Sluyters-Rehbach M., 1984, COMPREHENSIVE TREATI
[6] VANDERZIEL A, 1976, SOLID STATE PHYSICAL, P351
[7] ZSE SM, 1985, SEMICONDUCTOR DEVICE, P95

← 1 →