Electro-absorption and electro-refraction in InGaAsN quantum well structures

被引：19

作者：

Jalili, YS

Stavrinou, PN

Roberts, JS

Parry, G

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, Ctr Elect Mat & Devices, London SW7 2BZ, England

[2] Univ Sheffield, Dept Elect Engn, EPSRC Cent Facil Semicond 3 5, Sheffield S1 3JD, S Yorkshire, England

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 07期

关键词：

D O I：

10.1049/el:20020236

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first observation of electro-absorption in a InGaAsN-GaAs single quantum well pin-diode structure is reported. Clear excitonic resonances were observed at room temperature at 1150 nm and a strong Stark shift is obtained for applied fields of up to 2.6 x 10(7) V/m. The field induced changes in refractive index were calculated at 1300 and 1550 nm and it is concluded that low voltage phase modulators could be fabricated using this material.

引用

页码：343 / 344

页数：2

共 4 条

[1] GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance [J].