One-dimensional molecular wire on hydrogenated Si(001)

被引:43
作者
Cho, JH [1 ]
Oh, DH [1 ]
Kleinman, L [1 ]
机构
[1] Univ Texas, Dept Phys, Austin, TX 78712 USA
关键词
D O I
10.1103/PhysRevB.65.081310
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
An important example of hybrid organic-silicon systems is the fabrication of styrene molecular wires on a H-passivated Si(001) surface. Here we theoretically demonstrate that a styrene molecule which easily adsorbs on a single H-empty site can be further stabilized (with an energy barrier of 0.88 eV) by abstracting an,H atom from a neighboring Si dimer. This H-abstraction process creates another H-empty site, setting off a chain reaction that results in the growth of a styrene wire along the Si dimer row. Our simulated scanning tunneling microscope (STM) image for the resulting one-dimensional (1D) molecular wire is in good agreement with STM data. In particular, the antibonding pi orbitals on adjacent styrene molecules overlap, thus providing "channels" that permit charge transport along this 1D wire under a voltage bias.
引用
收藏
页码:1 / 4
页数:4
相关论文
共 15 条
[11]  
MASEL RI, 1996, PRINCIPLES ADSORPTIO, P607
[12]  
Perdew JP, 1996, PHYS REV LETT, V77, P3865, DOI 10.1103/PhysRevLett.77.3865
[13]   EFFICIENT PSEUDOPOTENTIALS FOR PLANE-WAVE CALCULATIONS [J].
TROULLIER, N ;
MARTINS, JL .
PHYSICAL REVIEW B, 1991, 43 (03) :1993-2006
[14]   SOFT SELF-CONSISTENT PSEUDOPOTENTIALS IN A GENERALIZED EIGENVALUE FORMALISM [J].
VANDERBILT, D .
PHYSICAL REVIEW B, 1990, 41 (11) :7892-7895
[15]   Controlled molecular adsorption on silicon: Laying a foundation for molecular devices [J].
Wolkow, RA .
ANNUAL REVIEW OF PHYSICAL CHEMISTRY, 1999, 50 :413-441