High-performance polymer TFTs printed on a plastic substrate

被引:58
作者
Park, SK [1 ]
Kim, YH [1 ]
Han, JI [1 ]
Moon, DG [1 ]
Kim, WK [1 ]
机构
[1] Korea Elect Technol Inst, Informat Display Res Ctr, Kyunggi, South Korea
关键词
dual-layer dielectric; microcontact printing; plastic substrate; polymer thin-film transistor (TFT);
D O I
10.1109/TED.2002.803642
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
High-performance poly (3-hexylthiophene) (P3HT) thin-film transistors array was fabricated on a plastic substrate by employing micro-contact printing process. The microcontact printing process, which uses a silicon elastomer stamp, enables the patterning of polymer layers without any photolithography process. As the gate dielectric, spun polyimide, and low-temperature ion-beam deposited silicon dioxide layers were used, forming a dual-layer structure. It is found out that the polymide layer improves the surface roughness of the dielectric and accordingly brings about enhanced device performance. Additionally, by using 02 plasma treatment, both higher drain current and carrier mobility were obtained simultaneously. Changes in the surface states of the source-drain electrodes and the morphology of the dielectric are proposed to account for the observed improvements. Based on the experiments, we built a high-performance plastic-based P3HT transistors array including 0.02 cm(2)/V . s in carrier mobility and on/off current ratio about 10(3) similar to 10(4).
引用
收藏
页码:2008 / 2015
页数:8
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