Intrinsic data retention in nanoscaled phase-change memories - Part II: Statistical analysis and prediction of failure time

被引：58

作者：

Redaelli, Andrea ^{[1
]}

Ielmini, Daniele

Russo, Ugo

Lacaita, Andrea L.

机构：

[1] Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy

[2] Politecn Milan, Italian Univ Nanoelect Team, I-20133 Milan, Italy

[3] CNR, IFN, Sez Politecn Milan, I-20133 Milan, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 12期

关键词：

amorphous semiconductors; chalcogenide; crystal growth; nonvolatile memories; phase-change memory (PCM);

D O I：

10.1109/TED.2006.885525

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The statistical spread of intrinsic data retention times in phase-change memory (PCM) cells is studied. Based on the crystallization and percolation model described in Part 1, the crystalline grain size in the amorphous volume after data loss is extracted. From the temperature dependence of grain size, the authors calculate the statistical shape factor for the distribution of failure times, allowing a statistical prediction of data retention in PCM large arrays. The scaling and optimization issues with respect to failure time statistical spread are finally addressed.

引用

页码：3040 / 3046

页数：7

共 18 条

[11]

Pirovano A, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P699

[12] Crystallization and phase separation in Ge2+xSb2Te5 thin films [J].

Privitera, S ;

Rimini, E ;

Bongiorno, C ;

Zonca, R ;

Pirovano, A ;

Bez, R .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (07) :4409-4413

[13]

Redaelli A, 2005, INT EL DEVICES MEET, P761

[14] Determination of the isothermal nucleation and growth parameters for the crystallization of thin Ge2Sb2Te5 films [J].

Ruitenberg, G ;

Petford-Long, AK ;

Doole, RC .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (06) :3116-3123

[15] Intrinsic data retention in nanoscaled phase-change memories - Part I: Monte Carlo model for crystallization and percolation [J].

Russo, Ugo ;

Ielmini, Daniele ;

Redaelli, Andrea ;

Lacaita, Andrea L. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (12) :3032-3039

[16] Models for phase-change of Ge2Sb2Te5 in optical and electrical memory devices [J].

Senkader, S ;

Wright, CD .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (02) :504-511

[17] Percolation models for gate oxide breakdown [J].

Stathis, JH .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (10) :5757-5766

[18] Materials aspects in phase change optical recording [J].

Zhou, GF .

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2001, 304 :73-80

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