Highly sensitive MISFET sensors with porous Pt-SnO2 gate electrode for CO gas sensing applications

被引：18

作者：

Fukuda, H ^{[1
]}

Kasama, K ^{[1
]}

Nomura, S ^{[1
]}

机构：

[1] Muroran Inst Technol, Fac Engn, Dept Elect & Elect Engn, Muroran, Hokkaido 0508585, Japan

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2000年 / 64卷 / 1-3期

关键词：

gas sensor; metal-insulator-semiconductor structure; MISFETs; structure; tin oxide; platinum;

D O I：

10.1016/S0925-4005(99)00501-8

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Novel devices based on a porous Pt-SnO2 metal-insulator-semiconductor field-effect transistor (MISFET) for carbon monoxide (CO) gas sensing have been proposed. The structure integrates the catalytic properties of porous Pt, a thin catalytic layer, and the spillover effect onto SnO2, a gas adsorptive oxide, with surface-sensitive MISFETs. The operation characteristics of the device for the detection of CO gas are presented as a function of CO gas concentration and operating temperature. The threshold voltage decreased rapidly with time when the device was exposed to CO gas depending on the operating temperature. It was possible to detect 54 ppm of CO gas with a response time of less than 1 min at 27 degrees C. A model was proposed to explain the operation. The proposed sensing mechanism of the device is supported well by experimental data. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：163 / 168

页数：6

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