GAS SENSITIVITIES OF SILICON MIS CAPACITORS INCORPORATED WITH CATALYST AND ADSORPTIVE OXIDE LAYERS

被引:7
作者
KANG, WP
KIM, CK
机构
[1] Solid State Microelectronics Laboratory, Department of Electrical Engineering, Vanderbilt University, Nashville
关键词
D O I
10.1149/1.2220839
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
A new family of gas sensors based on catalyst-adsorptive oxide-Si3N4-SiO2-Si-Al MIS capacitor has been developed. The structure integrates the catalytic properties of Pd, Pt, or Ag as a thin catalyst layer, and the gas sensing properties of SnO(x) or ZnO as a gas adsorptive oxide with a surface sensitive silicon MIS capacitor. The choice of catalyst layer and adsorptive oxide employed in the structure modifies the gas sensing characteristics: gas selectivity, sensitivity, activation energy, and reaction rate constant. Moreover, the sensors can detect O2, H-2, and CO gases at a much lower temperature than conventional solid state gas detectors.
引用
收藏
页码:L125 / L127
页数:3
相关论文
共 11 条
[1]  
CHANGE C, 1986, IEEE SOLID STATE SEN
[2]  
DOBOS K, 1983, P INT M CHEM SENS FU, P464
[3]  
LIU CC, 1992, 4TH INT M CHEM SENS, P2
[4]  
LUNDSTROM I, 1981, SENSOR ACTUATOR, V1, P400
[5]  
Madou M.J., 1989, CHEM SENSING SOLID S
[6]   TRANSITION METAL-GATE MOS GASEOUS DETECTORS [J].
POTEAT, TL ;
LALEVIC, B .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (01) :123-129
[7]   A STUDY OF PD-SI MIS SCHOTTKY-BARRIER DIODE HYDROGEN DETECTOR [J].
RUTHS, PF ;
ASHOK, S ;
FONASH, SJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (09) :1003-1009
[8]   DETECTION OF H2S WITH PD-GATE MOS FIELD-EFFECT TRANSISTORS [J].
SHIVARAMAN, MS .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3592-3593
[9]  
SZE SM, 1981, PHYSICS SEMICONDUCTO, P248
[10]  
WINISCHMAN H, 1979, J ELECTROCHEM SOC, V129, P623