Thermally induced Zr incorporation into Si from zirconium silicate thin films

被引:36
作者
Quevedo-Lopez, M
El-Bouanani, M
Addepalli, S
Duggan, JL
Gnade, BE
Wallace, RM [1 ]
Visokay, MR
Douglas, M
Bevan, MJ
Colombo, L
机构
[1] Univ N Texas, Dept Mat Sci, Denton, TX 76203 USA
[2] Texas Instruments Inc, Silicon Technol Dev, Dallas, TX 75243 USA
关键词
D O I
10.1063/1.1415418
中图分类号
O59 [应用物理学];
学科分类号
摘要
Monochromatic x-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and Rutherford backscattering spectrometry are used to study the outdiffusion of Zr from the alternate gate dielectric candidate ZrSixOy thin films deposited on Si(100). We find that Zr incorporation into Si from ZrSixOy appears to occur at annealing temperatures higher than 1000 degreesC. Incorporation of Zr to depths of up to 23 nm into the silicon substrate is observed. A diffusion coefficient of D(0)similar to 2x10(-15) cm(2)/s is estimated from the associated depth profiles. (C) 2001 American Institute of Physics.
引用
收藏
页码:2958 / 2960
页数:3
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