Enhancement of power conversion efficiency in GaAs solar cells with dual-layer quantum dots using flexible PDMS film

被引：44

作者：

Chen, Hsin-Chu ^{[2
,3
]}

Lin, Chien-Chung ^{[1
]}

Han, Hau-Vei ^{[2
,3
]}

Chen, Kuo-Ju ^{[2
,3
]}

Tsai, Yu-Lin ^{[2
,3
]}

Chang, Yi-An ^{[4
]}

Shih, Min-Hsiung ^{[2
,3
,5
]}

Kuo, Hao-Chung ^{[2
,3
]}

Yu, Peichen ^{[2
,3
]}

机构：

[1] Natl Chiao Tung Univ, Inst Photon Syst, Tainan 711, Taiwan

[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

[4] Natl Changhua Univ Educ, Dept Phys, Changhua 500, Taiwan

[5] Acad Sinica, Res Ctr Appl Sci, Taipei 115, Taiwan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2012年 / 104卷

关键词：

GaAs solar cell; Quantum dots; Dual-layer; PDMS;

D O I：

10.1016/j.solmat.2012.05.003

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

This study demonstrates the high performance of GaAs solar cells with dual-layer CdS quantum dots (QDs) carried by flexible polydimethylsiloxane (PDMS) film. Several parameters were enhanced, including the short circuit current, fill factor, and power conversion efficiency, which were measured under white light illumination similar to the solar spectrum. The flexible PDMS film was fabricated using the spin-coating technique, and was then used to embed dual-layer CdS QDs. Different concentrations of QDs were applied in this design to test the optimal combination. The proposed scheme enhances power conversion efficiency by 22%, compared to a GaAs solar cell without CdS QDs. The photon down-conversion capability in the ultraviolet (UV) range and additional antireflection capability in the longer visible-IR range were verified through the external quantum efficiency. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：92 / 96

页数：5

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