Enhanced efficiency for c-Si solar cell with nanopillar array via quantum dots layers

被引：67

作者：

Chen, Hsin-Chu ^{[1
,2
]}

Lin, Chien-Chung ^{[3
]}

Han, Hao-Wei ^{[1
,2
]}

Tsai, Yu-Lin ^{[1
,2
]}

Chang, Chia-Hua ^{[1
,2
]}

Wang, Hsun-Wen ^{[4
]}

Tsai, Min-An ^{[4
]}

Kuo, Hao-Chung ^{[1
,2
]}

Yu, Peichen ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Inst Photon Syst, Tainan 711, Taiwan

[4] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan

来源：

OPTICS EXPRESS | 2011年 / 19卷 / 19期

关键词：

PERFECT ANTIREFLECTION COATINGS; BROAD-BAND;

D O I：

10.1364/OE.19.0A1141

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The enhanced efficiency of the crystalline silicon (c-Si) solar cell with nanopillar arrays (NPAs) was demonstrated by deployment of CdS quantum dots (QDs). The NPAs was fabricated by the colloidal lithography and reactive-ion etching techniques. Under a simulated one-sun condition, the device with CdS QDs shows a 33% improvement of power conversion efficiency, compared with the one without QDs. For further investigation, the excitation spectrum of photoluminescence (PL), absorbance spectrum, current-voltage (I-V) characteristics, reflectance and external quantum efficiency of the device was measured and analyzed. It is noteworthy that the enhancement of efficiency could be attributed to the photon down-conversion, the antireflection, and the improved electrical property. (C) 2011 Optical Society of America

引用

页码：A1141 / A1147

页数：7

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