Wafer-scale silicon nanopillars and nanocones by Langmuir-Blodgett assembly and etching

被引：327

作者：

Hsu, Ching-Mei ^{[1
]}

Connor, Stephen T. ^{[2
]}

Tang, Mary X. ^{[3
]}

Cui, Yi ^{[1
]}

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Chem, Stanford, CA 94305 USA

[3] Stanford Nanofabricat Facil, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 13期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2988893

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a method combining Langmuir-Blodgett assembly and reactive ion etching to fabricate nanopillars with uniform coverage over an entire 4 inch wafer. We demonstrated precise control over the diameter and separation between the nanopillars ranging from 60 to 600 nm. We can also change the shape of the pillars from having vertical to tapered sidewalls with sharp tips exhibiting a radius of curvature of 5 nm. This method opens up many possible opportunities in nanoimprinting, solar cells, batteries, and scanning probes. (C) 2008 American Institute of Physics.

引用

页数：3

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