Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays

被引：141

作者：

Ee, Yik-Khoon ^{[1
]}

Arif, Ronald A.

Tansu, Nelson

Kumnorkaew, Pisist

Gilchrist, James F.

机构：

[1] Lehigh Univ, Dept Elect & Comp Engn, Ctr Opt Technol, Bethlehem, PA 18015 USA

[2] Lehigh Univ, Dept Chem Engn, Ctr Adv Mat & Nanotechnol, Bethlehem, PA 18015 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 22期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.2816891

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Improvement of light extraction efficiency of InGaN quantum wells light emitting diodes (LEDs) using SiO2/polystyrene microspheres was demonstrated experimentally. The utilization of SiO2/polystyrene microlens arrays on InGaN quantum wells LEDs, deposited via rapid convective deposition, allows the increase of the effective photon escape cone and reduction in the Fresnel reflection. Improvement of output power by 219% for InGaN quantum wells LEDs emitting at peak wavelength of 480 nm with SiO2/polystyrene microspheres microlens arrays was demonstrated. (C) 2007 American Institute of Physics.

引用

页数：3

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