Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface

被引：93

作者：

Huang, HW

Chu, JT

Kao, CC

Hseuh, TH

Lu, TC

Kuo, HC

Wang, SC ^{[1
]}

Yu, CC

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[3] TrueLight Corp, Hsinchu 300, Taiwan

[4] Highlink Corp, Hsinchu 300, Taiwan

来源：

NANOTECHNOLOGY | 2005年 / 16卷 / 09期

关键词：

D O I：

10.1088/0957-4484/16/9/071

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This investigation describes the development of an InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface using an Ni nano-mask and laser etching. The light output of the InGaN/GaN LED with a nano-roughened top p-GaN surface is 1.55 times that of a conventional LED, and the wall-plug efficiency is 68% higher at 20 mA. The series resistance of the InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.

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收藏

页码：1844 / 1848

页数：5

相关论文

共 13 条

[1] Nitride-based LEDs with 800 °C grown p-AllnGaN-GaN double-cap layers [J].

Chang, SJ ;

Wu, LW ;

Su, YK ;

Hsu, YP ;

Lai, WC ;

Tsai, JA ;

Sheu, JK ;

Lee, CT .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (06) :1447-1449

[2] High extraction efficiency InGaN micro-ring light-emitting diodes [J].

Choi, HW ;

Dawson, MD ;

Edwards, PR ;

Martin, RW .

APPLIED PHYSICS LETTERS, 2003, 83 (22) :4483-4485

[3] Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J].

Fujii, T ;

Gao, Y ;

Sharma, R ;

Hu, EL ;

DenBaars, SP ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 2004, 84 (06) :855-857

[4] Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching [J].

Huang, HW ;

Kao, CC ;

Hsueh, TH ;

Yu, CC ;

Lin, CF ;

Chu, JT ;

Kuo, HC ;

Wang, SC .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2004, 113 (02) :125-129

[5] Improved light-output and electrical performance of InGaN-based, light-emitting diode by microroughening of the p-GaN surface [J].

Huh, C ;

Lee, KS ;

Kang, EJ ;

Park, SJ .

JOURNAL OF APPLIED PHYSICS, 2003, 93 (11) :9383-9385

[6] InGaN/GaN quantum well interconnected microdisk light emitting diodes [J].

Jin, SX ;

Li, J ;

Lin, JY ;

Jiang, HX .

APPLIED PHYSICS LETTERS, 2000, 77 (20) :3236-3238

[7] Ultraviolet InGaN and GaN single-quantum-well-structure light-emitting diodes grown on epitaxially laterally overgrown GaN substrates [J].

Mukai, T ;

Nakamura, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (10) :5735-5739

[8] CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

APPLIED PHYSICS LETTERS, 1994, 64 (13) :1687-1689

[9] Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Sugimoto, Y ;

Kiyoku, H .

APPLIED PHYSICS LETTERS, 1997, 70 (07) :868-870

[10] HIGH-BRIGHTNESS INGAN BLUE, GREEN AND YELLOW LIGHT-EMITTING-DIODES WITH QUANTUM-WELL STRUCTURES [J].

NAKAMURA, S ;

SENOH, N ;

IWASA, N ;

NAGAHAMA, SI .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (7A) :L797-L799