Fabrication of GaN-based nanorod light emitting diodes using self-assemble nickel nano-mask and inductively coupled plasma reactive ion etching

被引:61
作者
Huang, HW [1 ]
Kao, CC
Hsueh, TH
Yu, CC
Lin, CF
Chu, JT
Kuo, HC
Wang, SC
机构
[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan
[2] Global Union Technol Corp, Hsinchu 300, Taiwan
[3] Natl Chung Hsing Univ, Dept Mat Engn, Taichung 400, Taiwan
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 113卷 / 02期
关键词
gallium nitride (GaN); nanorod; nickel; inductively coupled plasma (ICP);
D O I
10.1016/j.mseb.2004.07.004
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report a novel method to fabricate GaN-based nanorod light emitting diodes (LEDs) with controllable dimension and density using self-assemble nickel (Ni) and Ni/Si3N4 nano-masks and inductively coupled plasma reactive ion etching (ICP-RIE). Under the fixed Cl-2/Ar flow rate of 50/20 sccm. ICP/Bias power of 400/100 W and chamber pressure of 0.67 Pa, the GaN-based nanorod LEDs were fabricated with density of 2.2 x 10(9) to 3 x 10(10) cm(-2) and dimension of 150-60 nm by self assemble Ni nano-masks with various size. The size of Ni/Si3N4 nano-mask was control by the thickness Ni film ranging 150-50 Angstrom and rapid thermal annealing condition. The technique offers a controllable method of fabrication of GaN-based nanorod LEDs and should be applicable for fabrication of the others III-V nanoscale photonic and electronic devices. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:125 / 129
页数:5
相关论文
共 15 条
[1]   One-dimensional heterostructures in semiconductor nanowhiskers [J].
Björk, MT ;
Ohlsson, BJ ;
Sass, T ;
Persson, AI ;
Thelander, C ;
Magnusson, MH ;
Deppert, K ;
Wallenberg, LR ;
Samuelson, L .
APPLIED PHYSICS LETTERS, 2002, 80 (06) :1058-1060
[2]   Formation of low-temperature self-organized nanoscale nickel metal islands [J].
Carey, JD ;
Ong, LL ;
Silva, SRP .
NANOTECHNOLOGY, 2003, 14 (11) :1223-1227
[3]   Large-scale synthesis of single crystalline gallium nitride nanowires [J].
Cheng, GS ;
Zhang, LD ;
Zhu, Y ;
Fei, GT ;
Li, L ;
Mo, CM ;
Mao, YQ .
APPLIED PHYSICS LETTERS, 1999, 75 (16) :2455-2457
[4]   Laser-assisted catalytic growth of single crystal GaN nanowires [J].
Duan, XF ;
Lieber, CM .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2000, 122 (01) :188-189
[5]   Growth of nanowire superlattice structures for nanoscale photonics and electronics [J].
Gudiksen, MS ;
Lauhon, LJ ;
Wang, J ;
Smith, DC ;
Lieber, CM .
NATURE, 2002, 415 (6872) :617-620
[6]   Synthesis of gallium nitride nanorods through a carbon nanotube-confined reaction [J].
Han, WQ ;
Fan, SS ;
Li, QQ ;
Hu, YD .
SCIENCE, 1997, 277 (5330) :1287-1289
[7]   Pyrolysis approach to the synthesis of gallium nitride nanorods [J].
Han, WQ ;
Zettl, A .
APPLIED PHYSICS LETTERS, 2002, 80 (02) :303-305
[8]  
NAKAMURA S, 1994, APPL PHYS LETT, V64, P1689
[9]  
Nakamura S., 1995, JPN J APPL PHYS, V34, P797
[10]   Bulk-quantity GaN nanowires synthesized from hot filament chemical vapor deposition [J].
Peng, HY ;
Zhou, XT ;
Wang, N ;
Zheng, YF ;
Liao, LS ;
Shi, WS ;
Lee, CS ;
Lee, ST .
CHEMICAL PHYSICS LETTERS, 2000, 327 (5-6) :263-270