Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening

被引：1263

作者：

Fujii, T ^{[1
]}

Gao, Y ^{[1
]}

Sharma, R ^{[1
]}

Hu, EL ^{[1
]}

DenBaars, SP ^{[1
]}

Nakamura, S ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 06期

关键词：

D O I：

10.1063/1.1645992

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Roughened surfaces of light-emitting diodes (LEDs) provide substantial improvement in light extraction efficiency. By using the laser-lift-off technique followed by an anisotropic etching process to roughen the surface, an n-side-up GaN-based LED with a hexagonal "conelike" surface has been fabricated. The enhancement of the LED output power depends on the surface conditions. The output power of an optimally roughened surface LED shows a twofold to threefold increase compared to that of an LED before surface roughening. (C) 2004 American Institute of Physics.

引用

页码：855 / 857

页数：3

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