Comparison of p-side down and p-side up GaN light-emitting diodes fabricated by laser lift-off

被引：49

作者：

Chu, CF ^{[1
]}

Yu, CC ^{[1
]}

Cheng, HC ^{[1
]}

Lin, CF ^{[1
]}

Wang, SC ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 2B期

关键词：

GaN; laser lift-off (LLO); freestanding LLO-InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED); p-side up and p-side down LLO-LEDs;

D O I：

10.1143/JJAP.42.L147

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The performance characteristics of laser lift-off (LLO) freestanding InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) mounted on a Cu substrate with p-side up, and p-side down configurations were determined and compared. The InGaN/GaN MQW LED structures, which were originally fabricated on a sapphire substrate, were transferred to a Cu substrate by the LLO process into two different configurations, namely p-side up and p-side down with the same Ni/Pd/Au p-contact metallizations. Both p-side down and p-side up LLO-LEDs showed a higher current operation capability up to 400 mA than the original LEDs on the sapphire substrate. The p-side down LLO-LEDs showed a nearly eightfold increase in the light output power compared to the p-side up LLO-LEDs. The p-side down LLO-LEDs also showed a more stable wavelength emission spectrum than the p-side up ones.

引用

页码：L147 / L150

页数：4

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