Low-resistance ohmic contacts on p-type GaN using Ni/Pd/Au metallization

被引：53

作者：

Chu, CF ^{[1
]}

Yu, CC ^{[1
]}

Wang, YK ^{[1
]}

Tsai, JY ^{[1
]}

Lai, FI ^{[1
]}

Wang, SC ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 21期

关键词：

D O I：

10.1063/1.1327276

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, a low-resistance ohmic contact on p-type GaN using an alloy of Ni/Pd/Au is reported. The Mg doped p-type GaN samples were grown by metalorganic chemical vapor deposition with a carrier concentration of 4.1x10(17) cm(-3). The as-grown Mg doped samples were deposited with Ni (20 nm)/Pd (20 nm)/Au (100 nm) and then annealed in air, nitrogen, and oxygen ambient conditions at different annealing temperatures ranging from 350 to 650 degreesC. Linear I-V ohmic characteristics were observed with specific resistance as low as 1.0x10(-4) Omega cm(2) for the samples annealed in oxygen atmosphere. Similar contact metal composition was also deposited on Be-implanted p-type GaN samples with a carrier density of 8.1x10(19) cm(-3). Without further annealing process, the samples show good ohmic contact with a lowest specific resistance of 4.5x10(-6) Omega cm(2). (C) 2000 American Institute of Physics. [S0003-6951(00)01847-7].

引用

页码：3423 / 3425

页数：3

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