Low-resistance ohmic contacts to p-type GaN

被引：300

作者：

Ho, JK ^{[1
]}

Jong, CS ^{[1
]}

Chiu, CC ^{[1
]}

Huang, CN ^{[1
]}

Chen, CY ^{[1
]}

Shih, KK ^{[1
]}

机构：

[1] Ind Technol Res Inst, Optoelect & Syst Labs, Hsinchu 310, Taiwan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 09期

关键词：

D O I：

10.1063/1.123546

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-resistance ohmic contacts with high transparency to p-type GaN have been developed by oxidizing Ni/Au thin films. Compared to the metallic Ni/Au contacts, the oxidized Ni/Au contacts exhibited lower specific contact resistance and much improved transparency. The transparency was from 65% to 80% in the wavelength of 450-550 nm. A specific contact resistance below 1.0 X 10(-4) Ohm cm(2) was obtained by oxidizing Ni(10 nm)/Au(5 nm) on p-type GaN. The mechanism of low-resistance ohmic contact could be related to the formation of NiO. (C) 1999 American Institute of Physics. [S0003-6951(99)04809-3].

引用

页码：1275 / 1277

页数：3

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