Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN

被引：157

作者：

Jang, JS ^{[1
]}

Chang, IS

Kim, HK

Seong, TY

Lee, SH

Park, SJ

机构：

[1] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 506712, South Korea

[2] Kwangju Inst Sci & Technol, Ctr Elect Mat Res, Kwangju 506712, South Korea

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 01期

关键词：

D O I：

10.1063/1.123954

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a Pt (20 nm) Ni (30 nm)/Au (80 nm) metallization scheme for low-resistance ohmic contacts to the moderately doped p-type GaN:Mg (3X10(17) cm(-3)). Both as-deposited and annealed Pt/Ni/Au contacts on p-GaN exhibit linear current-voltage characteristics, showing that a high-quality ohmic contact is formed. The Pt/Ni/Au scheme shows the specific contact resistance of 5.1X10(-4) Ohm cm(2) when annealed at 350 degrees C for 1 min in a flowing N-2 atmosphere. (C) 1999 American Institute of Physics. [S0003-6951(99)03101-0].

引用

页码：70 / 72

页数：3

共 19 条

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