Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment

被引：215

作者：

Kim, JK ^{[1
]}

Lee, JL

Lee, JW

Shin, HE

Park, YJ

Kim, T

机构：

[1] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, South Korea

[2] Samsung Adv Inst Technol, Photon Lab, Suwon 440600, South Korea

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 20期

关键词：

D O I：

10.1063/1.122641

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ohmic contact to p-type GaN with the lowest contact resistivity was developed by the surface treatment prior to Pd/Au metal deposition. The contact resistivity drastically decreased from 2.9 x 10(-2) to 4.3 x 10(-4) Ohm cm(2) by the surface treatment using aqua regia. The surface treatment plays a role in removing the surface oxide formed on p-type GaN during epitaxial growth, and subsequently in reducing the barrier height for holes at the interface of Pd/ p-type GaN, resulting in the good ohmic contacts to p-type GaN. (C) 1998 American Institute of Physics. [S0003-6951(98)01246-7].

引用

页码：2953 / 2955

页数：3

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