Optical patterning of GaN films

被引:128
作者
Kelly, MK
Ambacher, O
Dahlheimer, B
Groos, G
Dimitrov, R
Angerer, H
Stutzmann, M
机构
[1] Walter Schottky Institut, TU Munchen, 85748 Garching, Am Coulombwall
关键词
D O I
10.1063/1.117473
中图分类号
O59 [应用物理学];
学科分类号
摘要
Patterned etching of GaN films was achieved with laser-induced thermal decomposition. High-energy laser pulses are used to locally heat the film above 900 degrees C, causing rapid nitrogen effusion. Excess gallium is then removed by conventional etching. At exposures of 0.4 J/cm(2) with 355 nm light, etch rates of 50-70 nm per pulse were obtained. Illumination with an interference grating was used to produce trenches as narrow as 100 nm. (C) 1996 American Institute of Physics.
引用
收藏
页码:1749 / 1751
页数:3
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