Lateral structuring of III-V quantum well systems with pulsed-laser-induced transient thermal gratings

被引：19

作者：

Kelly, MK

Nebel, CE

Stutzmann, M

Bohm, G

机构：

[1] Walter Schottky Institut, Technische Universität München, 85748 Garching, Am Coulombwall

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 14期

关键词：

D O I：

10.1063/1.115647

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A two-dimensional quantum well structure grown by molecular beam epitaxy has been laterally structured with an interference pattern from a high-energy pulsed laser. The resulting thermal grating produces a reduction in the carrier density, which causes a lateral modulation in the band levels, with a period of 380 nm. Photoluminescence spectroscopy has been used for characterization. (C) 1996 American Institute of Physics.

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页码：1984 / 1986

页数：3

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