ANNEALING EFFECT IN SI-DOPED GAAS AND ALGAAS LAYERS GROWN BY MBE

被引：6

作者：

ISHIKAWA, T

INATA, T

KONDO, K

SHIBATOMI, A

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 04期

关键词：

SEMICONDUCTING ALUMINUM COMPOUNDS - Growth;

D O I：

10.1049/el:19860132

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effect of annealing on Si-doped GaAs and Al//0//. //3Ga//0//. //7As layers grown by MBE has been studied. In the heavily doped samples, the donor concentration decreased considerably and the broad luminescence characteristic of the SA center reported in bulk n-GaAs appeared. The results suggests evidence that annealing converts some of the Si donors into complexes like the SA center, which does not act as a donor.

引用

页码：189 / 190

页数：2

共 3 条

[1] OPTICAL PROPERTIES OF N-TYPE GAAS .2. FORMATION OF EFFICIENT HOLE TRAPS DURING ANNEALING IN TE-DOPED GAAS [J].