DOPING OF GAAS IN METALORGANIC MBE USING GASEOUS SOURCES

被引：31

作者：

HEINECKE, H ^{[1
]}

WERNER, K ^{[1
]}

WEYERS, M ^{[1
]}

LUTH, H ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST PHYS 2,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(87)90403-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：270 / 275

页数：6

共 22 条

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[2] SIH4 DOPING OF MBE GAAS AND ALXGA1-XAS
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DEMIGUEL, JL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 568 - 571
[3] OBSERVATION OF TUNABLE BAND-GAP AND TWO-DIMENSIONAL SUBBANDS IN A NOVEL GAAS SUPER-LATTICE
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OLEGO, D
PLOOG, K
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STOLZ, HJ
ABSTREITER, G
[J]. PHYSICAL REVIEW LETTERS, 1981, 47 (12) : 864 - 867
[4] ANOMALOUS REDISTRIBUTION OF BERYLLIUM IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
ENQUIST, P
WICKS, GW
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HITZMAN, C
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) : 4130 - 4134
[5] BE DOPING EFFECT ON GROWTH-KINETICS OF GAAS GROWN BY MBE
IIMURA, Y
KAWABE, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L81 - L84
[6] PROPERTIES OF GAAS-SI EPITAXIAL LAYERS GROWN IN A MULTIWAFER MOCVD REACTOR
KANBER, H
ZIELINSKI, T
WHELAN, JM
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1985, 14 (06) : 769 - 781
[7] KAWAGUCHI Y, 1986, I PHYS C SER, V79, P79
[8] MBE GROWTH OF HIGH-QUALITY GAAS USING TRIETHYLGALLIUM AS A GALLIUM SOURCE
KONDO, K
ISHIKAWA, H
SASA, S
SUGIYAMA, Y
HIYAMIZU, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L52 - L53
[9] KROGER FA, 1964, CHEM IMPERFECT CRYST, P347
[10] SILICON DOPING OF GAAS AND ALXGA1-XAS USING DISILANE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION
KUECH, TF
VEUHOFF, E
MEYERSON, BS
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 48 - 53

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