SIH4 DOPING OF MBE GAAS AND ALXGA1-XAS

[1] TEMPERATURE-DEPENDENCE OF THE GROWTH-RATE OF SILICON PREPARED THROUGH CHEMICAL VAPOR-DEPOSITION FROM SILANE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 153 - 155

[2] KINETICS OF THE DEPOSITION OF SILICON BY SILANE PYROLYSIS AT LOW-TEMPERATURES AND ATMOSPHERIC-PRESSURE [J]. THIN SOLID FILMS, 1979, 60 (01) : 19 - 25

[3] DINGLE R, 1977, 6TH P INT S GAAS REL, V33, P210

[4] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1134 - 1149

[5] KINETICS OF SILICON DEPOSITION ON SILICON BY PYROLYSIS OF SILANE - MASS-SPECTROMETRIC INVESTIGATION BY MOLECULAR-BEAM SAMPLING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) : 899 - 907

[6] SI AND SN DOPING IN ALXGA1-XAS GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L476 - L478

[7] ELECTRICAL-PROPERTIES OF SI-DOPED ALXGA1-XAS LAYERS GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11): : L675 - L676

[8] DISILANE - A NEW SILICON DOPING SOURCE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 986 - 988

[9] THE EFFECT OF ARSENIC VAPOR SPECIES ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (03): : 167 - 173

[10] CORRELATION BETWEEN ELECTRON TRAPS AND GROWTH-PROCESSES IN N-GAAS PREPARED BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 311 - 312

[1] TEMPERATURE-DEPENDENCE OF THE GROWTH-RATE OF SILICON PREPARED THROUGH CHEMICAL VAPOR-DEPOSITION FROM SILANE [J]. APPLIED PHYSICS LETTERS, 1982, 41 (02) : 153 - 155

[2] KINETICS OF THE DEPOSITION OF SILICON BY SILANE PYROLYSIS AT LOW-TEMPERATURES AND ATMOSPHERIC-PRESSURE [J]. THIN SOLID FILMS, 1979, 60 (01) : 19 - 25

[3] DINGLE R, 1977, 6TH P INT S GAAS REL, V33, P210

[4] NEW METHOD FOR GROWING GAAS EPILAYERS BY LOW-PRESSURE ORGANOMETALLICS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) : 1134 - 1149

[5] KINETICS OF SILICON DEPOSITION ON SILICON BY PYROLYSIS OF SILANE - MASS-SPECTROMETRIC INVESTIGATION BY MOLECULAR-BEAM SAMPLING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) : 899 - 907

[6] SI AND SN DOPING IN ALXGA1-XAS GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L476 - L478

[7] ELECTRICAL-PROPERTIES OF SI-DOPED ALXGA1-XAS LAYERS GROWN BY MBE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11): : L675 - L676

[8] DISILANE - A NEW SILICON DOPING SOURCE IN METALORGANIC CHEMICAL VAPOR-DEPOSITION OF GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 986 - 988

[9] THE EFFECT OF ARSENIC VAPOR SPECIES ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (03): : 167 - 173

[10] CORRELATION BETWEEN ELECTRON TRAPS AND GROWTH-PROCESSES IN N-GAAS PREPARED BY MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 311 - 312