BE DOPING EFFECT ON GROWTH-KINETICS OF GAAS GROWN BY MBE

[1] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[2] MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 540 - 546

[3] HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1

[4] EFFECTS OF BE AND SI ON DISORDERING OF THE ALAS/GAAS SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 849 - 850

[5] LEE TC, 1985, UNPUB 2TH P INT C MO, P294

[6] LEIVIN JL, 1986, UNPUB J ELECTRON MAT, V15

[7] DIFFRACTION FROM STEPPED SURFACES .1. REVERSIBLE SURFACES [J]. SURFACE SCIENCE, 1984, 139 (01) : 121 - 154

[8] FAR FROM EQUILIBRIUM VAPOR-PHASE GROWTH OF LATTICE MATCHED III-V COMPOUND SEMICONDUCTOR INTERFACES - SOME BASIC CONCEPTS AND MONTE-CARLO COMPUTER-SIMULATIONS [J]. SURFACE SCIENCE, 1983, 132 (1-3) : 344 - 374

[9] IMPLICATIONS OF THE CONFIGURATION-DEPENDENT REACTIVE INCORPORATION GROWTH-PROCESS FOR THE GROUP-V PRESSURE AND SUBSTRATE-TEMPERATURE DEPENDENCE OF III-V MOLECULAR-BEAM EPITAXIAL-GROWTH AND THE DYNAMICS OF THE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 247 - 249

[10] BERYLLIUM REDISTRIBUTION DURING GROWTH OF GAAS AND ALGAAS BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1816 - 1822

[1] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9

[2] MONTE-CARLO SIMULATIONS OF MBE GROWTH OF III-V SEMICONDUCTORS - THE GROWTH-KINETICS, MECHANISM, AND CONSEQUENCES FOR THE DYNAMICS OF RHEED INTENSITY [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 540 - 546

[3] HARRIS JJ, 1981, SURF SCI, V103, pL90, DOI 10.1016/0039-6028(81)90091-1

[4] EFFECTS OF BE AND SI ON DISORDERING OF THE ALAS/GAAS SUPERLATTICE [J]. APPLIED PHYSICS LETTERS, 1985, 46 (09) : 849 - 850

[5] LEE TC, 1985, UNPUB 2TH P INT C MO, P294

[6] LEIVIN JL, 1986, UNPUB J ELECTRON MAT, V15

[7] DIFFRACTION FROM STEPPED SURFACES .1. REVERSIBLE SURFACES [J]. SURFACE SCIENCE, 1984, 139 (01) : 121 - 154

[8] FAR FROM EQUILIBRIUM VAPOR-PHASE GROWTH OF LATTICE MATCHED III-V COMPOUND SEMICONDUCTOR INTERFACES - SOME BASIC CONCEPTS AND MONTE-CARLO COMPUTER-SIMULATIONS [J]. SURFACE SCIENCE, 1983, 132 (1-3) : 344 - 374

[9] IMPLICATIONS OF THE CONFIGURATION-DEPENDENT REACTIVE INCORPORATION GROWTH-PROCESS FOR THE GROUP-V PRESSURE AND SUBSTRATE-TEMPERATURE DEPENDENCE OF III-V MOLECULAR-BEAM EPITAXIAL-GROWTH AND THE DYNAMICS OF THE REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION INTENSITY [J]. APPLIED PHYSICS LETTERS, 1985, 47 (03) : 247 - 249

[10] BERYLLIUM REDISTRIBUTION DURING GROWTH OF GAAS AND ALGAAS BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) : 1816 - 1822