DOPING OF GAAS IN METALORGANIC MBE USING GASEOUS SOURCES

被引：31

作者：

HEINECKE, H ^{[1
]}

WERNER, K ^{[1
]}

WEYERS, M ^{[1
]}

LUTH, H ^{[1
]}

BALK, P ^{[1
]}

机构：

[1] RHEIN WESTFAL TH AACHEN,INST PHYS 2,D-5100 AACHEN,FED REP GER

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 81卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(87)90403-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：270 / 275

页数：6

共 22 条

[11] SN INCORPORATION AND ELECTRON-CONCENTRATION IN VAPOR-PHASE EPITAXIALLY GROWN GAAS
MAIER, M
HANEL, B
BALK, P
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 342 - 343
[12] ELECTRON-MOBILITY IN VAPOR-GROWN GAAS FILMS
POTH, H
BRUCH, H
HEYEN, M
BALK, P
[J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (01) : 285 - 288
[13] A COMPARATIVE-STUDY OF GA(CH3)3 AND GA(C2H5)3 IN THE MOMBE OF GAAS
PUTZ, N
HEINECKE, H
HEYEN, M
BALK, P
WEYERS, M
LUTH, H
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 74 (02) : 292 - 300
[14] GAAS GROWTH IN METAL-ORGANIC MBE
PUTZ, N
VEUHOFF, E
HEINECKE, H
HEYEN, M
LUTH, H
BALK, P
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 671 - 673
[15] MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS USING TRIMETHYLGALLIUM AS A GA SOURCE
TOKUMITSU, E
KUDOU, Y
KONAGAI, M
TAKAHASHI, K
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) : 3163 - 3165
[16] CHEMICAL BEAM EPITAXY OF INGAAS
TSANG, WT
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) : 1415 - 1418
[17] VERY LOW CURRENT THRESHOLD GAAS/AL0.5GA0.5AS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY CHEMICAL BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (08) : 511 - 513
[18] A STUDY OF SILICON INCORPORATION IN GAAS MOCVD LAYERS
VEUHOFF, E
KUECH, TF
MEYERSON, BS
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (08) : 1958 - 1961
[19] DEFECTS IN GAAS FILMS GROWN BY MOMBE
WERNER, K
HEINECKE, H
WEYERS, M
LUTH, H
BALK, P
[J]. JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) : 281 - 287
[20] INTENTIONAL P-TYPE DOPING BY CARBON IN METALORGANIC MBE OF GAAS
WEYERS, M
PUTZ, N
HEINECKE, H
HEYEN, M
LUTH, H
BALK, P
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (02) : 57 - 59

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